在 SiO2 上进行横向 Ge 纳米线的生长。
Lateral, Ge, nanowire growth on SiO2.
机构信息
Information and Quantum Systems Laboratory, Hewlett-Packard Laboratories, Palo Alto, CA 94304, USA.
出版信息
Nanotechnology. 2011 Feb 11;22(6):065201. doi: 10.1088/0957-4484/22/6/065201. Epub 2011 Jan 7.
Vapor-liquid-solid (VLS) nanowires (NWs) typically grow in [111] directions. Previously, the authors have demonstrated guided Si NW growth, engineering the VLS NWs to grow in a [110] direction against a SiO(2) surface. In this work, the authors demonstrate guided high-quality Ge nanowire growth against a SiO(2) surface in the substrate plane to bridge between two Si mesas. The authors explore the interfaces between a Ge NW and the two Si device-layer mesas and report high-quality, epitaxial interfaces between the Ge NW and both Si mesas.
汽液固（VLS）纳米线（NWs）通常沿[111]方向生长。此前，作者已经证明了 Si NW 的引导生长，通过工程设计使 VLS NW 沿[110]方向在 SiO2 表面上生长。在这项工作中，作者证明了在基底平面中沿 SiO2 表面引导高质量 Ge 纳米线生长，以在两个 Si 台面之间桥接。作者探索了 Ge NW 与两个 Si 器件层台面之间的界面，并报告了 Ge NW 与两个 Si 台面之间的高质量、外延界面。
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