Department of Mechanical Engineering, Johns Hopkins University, Baltimore, MD 21218, USA.
Science. 2009 Dec 18;326(5960):1686-90. doi: 10.1126/science.1178226.
In crystalline materials, plastic deformation occurs by the motion of dislocations, and the regions between individual crystallites, called grain boundaries, act as obstacles to dislocation motion. Grain boundaries are widely envisaged to be mechanically static structures, but this report outlines an experimental investigation of stress-driven grain boundary migration manifested as grain growth in nanocrystalline aluminum thin films. Specimens fabricated with specially designed stress and strain concentrators are used to uncover the relative importance of these parameters on grain growth. In contrast to traditional descriptions of grain boundaries as stationary obstacles to dislocation-based plasticity, the results of this study indicate that shear stresses drive grain boundaries to move in a manner consistent with recent molecular dynamics simulations and theoretical predictions of coupled grain boundary migration.
在晶体材料中,塑性变形是通过位错的运动产生的,而单个晶粒之间的区域,称为晶界,作为位错运动的障碍。晶界通常被认为是机械静态结构,但本报告概述了一项实验研究,研究了在纳米晶铝薄膜中表现为晶粒长大的应力驱动晶界迁移。使用专门设计的应力和应变集中器制造的样品用于揭示这些参数对晶粒生长的相对重要性。与传统的将晶界描述为基于位错塑性的固定障碍的描述相反,本研究的结果表明,剪切应力以与最近的分子动力学模拟和耦合晶界迁移的理论预测一致的方式驱动晶界移动。