Shirai Hideto, Kishimoto Eiji, Kokuhata Tatsuya, Miyagawa Hayato, Koshiba Shyun, Nakanishi Shunsuke, Itoh Hiroshi, Hangyo Masanori, Kim Tae Geun, Tsurumachi Noriaki
Faculty of Engineering, Kagawa University, 2217-20 Hayashi-cho, Takamatsu, Japan.
Appl Opt. 2009 Dec 20;48(36):6934-9. doi: 10.1364/AO.48.006934.
We have fabricated Fabry-Perot (FP) cavities in the THz region with a ZnTe crystal as a cavity layer by a simple stacking method. We observed more than a three times enhancement of the THz emission intensity in the FP cavities compared with the bare ZnTe crystal at the frequencies of the resonant modes and stopband edges. On the other hand, suppression of the THz emission occurs at frequencies in the stopband. The enhancement and suppression of the THz emission are caused by the modification of the optical density of state in the FP cavities compared to the vacuum.
我们通过一种简单的堆叠方法，以碲化锌（ZnTe）晶体作为腔层，在太赫兹（THz）区域制造了法布里 - 珀罗（FP）腔。我们观察到，在共振模式频率和阻带边缘处，与裸ZnTe晶体相比，FP腔中的太赫兹发射强度增强了三倍以上。另一方面，在阻带频率处太赫兹发射受到抑制。太赫兹发射的增强和抑制是由于与真空相比，FP腔中光学态密度的改变所致。
