Groupe de Recherche en Physiologie végétale (GRPV), Université catholique de Louvain, 5 (Bte 13) Place Croix du Sud, 1348 Louvain-la-Neuve, Belgium.
J Plant Physiol. 2010 Mar 15;167(5):365-74. doi: 10.1016/j.jplph.2009.09.019. Epub 2009 Dec 23.
Beside a direct toxicity, cadmium impact on plants involves both a secondary-induced water stress and an oxidative stress. Proliferating cell lines of Atriplex halimus were selected for their sensitivity or resistance to polyethylene glycol (PEG 10,000, 20%) and then exposed to 100 microM CdCl2 in the simultaneous presence or absence of PEG 20% or 150 mM NaCl. The PEG resistant cell line exhibited a higher growth in the presence of Cd than the sensitive line, although Cd acccumulation was higher in the former than in the latter. Exogenous PEG induced an increase in Cd concentration in the sensitive but not in the resistant cell line while NaCl induced a decrease in Cd accumulation in both cell lines. In the presence of Cd alone, the water content (WC) was higher and the osmotic potential was lower in PEG-sensitive than in PEG resistant line. The presence of PEG in the Cd-containing medium increased the WC and decreased the osmotic potential in PEG-resistant line comparatively to Cd stress alone, while an inverse trend was observed for the sensitive line. The PEG-resistant cell line displayed a higher ability to cope with oxidative stress in relation to an increase of endogenous antioxidants (glutathione and ascorbic acid), a high constitutive superoxide dismutase (EC 1.15.1.1) activity and an efficient Cd-induced increase in glutathione reductase (GR) (EC 1.6.4.1) and ascorbate peroxidase (APX) (EC 1.11.1.11). Cadmium tolerance in PEG-resistant line is thus not related to any strategy of Cd exclusion or osmotic adjustment but to tolerance mechanisms allowing the tissue to restrict the deleterious impact of accumulated Cd.
除了直接毒性外,镉对植物的影响还包括二次诱导的水分胁迫和氧化应激。选择具有对聚乙二醇(PEG 10,000,20%)敏感性或抗性的滨藜增殖细胞系,然后在同时存在或不存在 PEG 20%或 150 mM NaCl 的情况下暴露于 100 μM CdCl2。与敏感系相比,PEG 抗性细胞系在存在 Cd 的情况下表现出更高的生长,尽管前者的 Cd 积累量高于后者。外源性 PEG 诱导敏感系中 Cd 浓度增加,但不诱导抗性系中 Cd 浓度增加,而 NaCl 诱导两种细胞系中 Cd 积累减少。在单独存在 Cd 的情况下,PEG 敏感系中的水分含量(WC)较高,渗透势较低。在含有 Cd 的培养基中存在 PEG 会增加 PEG 抗性系中的 WC 并降低渗透势,而在敏感系中则观察到相反的趋势。与抗氧化剂(谷胱甘肽和抗坏血酸)的内源增加,高组成型超氧化物歧化酶(EC 1.15.1.1)活性以及谷胱甘肽还原酶(GR)(EC 1.6.4.1)和抗坏血酸过氧化物酶(APX)(EC 1.11.1.11)的 Cd 诱导增加相比,PEG 抗性细胞系显示出更高的应对氧化应激的能力。因此,PEG 抗性系中的 Cd 耐受性与任何 Cd 排除或渗透调节策略都无关,而是与允许组织限制积累 Cd 的有害影响的耐受性机制有关。