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溅射 SiO2 作为低声阻抗材料用于 BAW 谐振器中的布拉格反射镜制造。

Sputtered SiO2 as low acoustic impedance material for Bragg mirror fabrication in BAW resonators.

机构信息

Grupo de Microsistemas y Materiales Electronicos of Universidad Politecnica de Madrid, Madrid, Spain.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2010 Jan;57(1):23-9. doi: 10.1109/TUFFC.2010.1374.

Abstract

In this paper we describe the procedure to sputter low acoustic impedance SiO(2) films to be used as a low acoustic impedance layer in Bragg mirrors for BAW resonators. The composition and structure of the material are assessed through infrared absorption spectroscopy. The acoustic properties of the films (mass density and sound velocity) are assessed through X-ray reflectometry and picosecond acoustic spectroscopy. A second measurement of the sound velocity is achieved through the analysis of the longitudinal lambda/2 resonance that appears in these silicon oxide films when used as uppermost layer of an acoustic reflector placed under an AlN-based resonator.

摘要

本文介绍了溅射低声阻抗 SiO(2) 薄膜的工艺,该薄膜将用作 BAW 谐振器布拉格反射镜中的低声阻抗层。通过红外吸收光谱评估材料的组成和结构。通过 X 射线反射法和皮秒声波谱法评估薄膜的声特性(质量密度和声速)。当将这种氧化硅薄膜用作置于基于 AlN 的谐振器下方的声反射器的最上层时,通过分析出现在这些氧化硅薄膜中的纵向 λ/2 共振,可以实现对声速的第二次测量。

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