Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
IEEE Trans Ultrason Ferroelectr Freq Control. 2010 Jan;57(1):38-45. doi: 10.1109/TUFFC.2010.1376.
This paper reports on the design and experimental verification of a new class of thin-film (250 nm) superhigh- frequency laterally-vibrating piezoelectric microelectromechanical (MEMS) resonators suitable for the fabrication of narrow-band MEMS filters operating at frequencies above 3 GHz. The device dimensions have been opportunely scaled both in the lateral and vertical dimensions to excite a contour-extensional mode of vibration in nanofeatures of an ultra-thin (250 nm) AlN film. In this first demonstration, 2-port resonators vibrating up to 4.5 GHz have been fabricated on the same die and attained electromechanical coupling, kt(2), in excess of 1.5%. These devices are employed to synthesize the highest frequency MEMS filter (3.7 GHz) based on AlN contour-mode resonator technology ever reported.
本文报告了一类新型的薄膜（250nm）超高频横向振动压电微机电（MEMS）谐振器的设计和实验验证，适用于制造工作频率高于 3GHz 的窄带 MEMS 滤波器。该器件的尺寸在横向和纵向都进行了适当的缩放，以激发超薄膜（250nm）AlN 薄膜中的纳米结构的轮廓拉伸振动模式。在首次演示中，在同一晶圆上制造了高达 4.5GHz 的 2 端口谐振器，并实现了超过 1.5%的机电耦合 kt(2)。这些器件被用于合成基于 AlN 轮廓模式谐振器技术的有史以来报告的最高频率 MEMS 滤波器（3.7GHz）。
