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利用光斑尺寸转换将氮化镓/氮化铝全光开关与氮化硅/氮化铝波导集成。

Integration of GaN/AlN all-optical switch with SiN/AlN waveguide utilizing spot-size conversion.

作者信息

Iizuka Norio, Yoshida Haruhiko, Managaki Nobuto, Shimizu Toshimasa, Hassanet Sodabanlu, Cumtornkittikul Chiyasit, Sugiyama Masakazu, Nakano Yoshiaki

机构信息

Corporate Research & Development Center, Toshiba Corporation,1 Kimukai-Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan.

出版信息

Opt Express. 2009 Dec 7;17(25):23247-53. doi: 10.1364/OE.17.023247.

DOI:10.1364/OE.17.023247
PMID:20052250
Abstract

Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the coupling efficiency between the input fiber and the switch. With a stair-like spot-size converter, the absorption saturation of 5 dB is achieved with a pulse energy of 25 pJ. The switch is integrated with a SiN/AlN waveguide and spot-size converters, and the structure provides the possibility of an integration of the switch with other functional devices. To further improve the coupling loss between the waveguide and the switch, triangular-shaped converters are investigated, demonstrating losses as low as 2 dB/facet.

摘要

研究了用于全光开关的光斑尺寸转换器,该转换器利用GaN/AlN多量子阱中的子带间跃迁,目的是通过提高输入光纤与开关之间的耦合效率来降低操作功率。使用阶梯状光斑尺寸转换器,在25 pJ的脉冲能量下实现了5 dB的吸收饱和。该开关与SiN/AlN波导和光斑尺寸转换器集成在一起,这种结构为开关与其他功能器件的集成提供了可能性。为了进一步降低波导与开关之间的耦合损耗,对三角形转换器进行了研究,结果表明其损耗低至2 dB/面。

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