集成在绝缘体上硅波导上的铟镓砷PIN光电探测器。

InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides.

作者信息

Sheng Zhen, Liu Liu, Brouckaert Joost, He Sailing, Van Thourhout Dries

机构信息

INTEC Department, Photonics Research Group, Ghent University-IMEC, Gent, Belgium.

出版信息

Opt Express. 2010 Jan 18;18(2):1756-61. doi: 10.1364/OE.18.001756.

DOI:10.1364/OE.18.001756

PMID:20174003

Abstract

InGaAs PIN photodetectors heterogeneously integrated on silicon-on-insulator waveguides are fabricated and characterized. Efficient evanescent coupling between silicon-on-insulator waveguides and InGaAs photodetectors is achieved. The fabricated photodetectors can work well without external bias and have a very low dark current of 10pA. The measured responsivity of a 40microm-long photodetector is 1.1A/W (excluding the coupling loss between the fiber and the SOI waveguide) at a wavelength of 1550nm and shows good linearity for an input power range of 40dB. Due to the large absorption coefficient of InGaAs and the efficient evanescent coupling, the fabricated photodetectors can cover the whole S, C and L communication bands.

摘要

制造并表征了异质集成在绝缘体上硅波导上的铟镓砷PIN光电探测器。实现了绝缘体上硅波导与铟镓砷光电探测器之间的高效倏逝耦合。所制造的光电探测器无需外部偏置即可良好工作，并且具有10pA的极低暗电流。在1550nm波长下，一个40微米长的光电探测器的测量响应度为1.1A/W（不包括光纤与绝缘体上硅波导之间的耦合损耗），并且在40dB的输入功率范围内显示出良好的线性度。由于铟镓砷的大吸收系数和高效的倏逝耦合，所制造的光电探测器可以覆盖整个S、C和L通信波段。