Department of Physics, Yasouj University, Yasouj 75918-74831, Iran.
Anal Bioanal Chem. 2010 Apr;396(8):2741-55. doi: 10.1007/s00216-009-3401-9. Epub 2010 Jan 21.
Depth profiling of nanostructures is of high importance both technologically and fundamentally. Therefore, many different methods have been developed for determination of the depth distribution of atoms, for example ion beam (e.g. O(2)(+) , Ar(+)) sputtering, low-damage C(60) cluster ion sputtering for depth profiling of organic materials, water droplet cluster ion beam depth profiling, ion-probing techniques (Rutherford backscattering spectroscopy (RBS), secondary-ion mass spectroscopy (SIMS) and glow-discharge optical emission spectroscopy (GDOES)), X-ray microanalysis using the electron probe variation technique combined with Monte Carlo calculations, angle-resolved XPS (ARXPS), and X-ray photoelectron spectroscopy (XPS) peak-shape analysis. Each of the depth profiling techniques has its own advantages and disadvantages. However, in many cases, non-destructive techniques are preferred; these include ARXPS and XPS peak-shape analysis. The former together with parallel factor analysis is suitable for giving an overall understanding of chemistry and morphology with depth. It works very well for flat surfaces but it fails for rough or nanostructured surfaces because of the shadowing effect. In the latter method shadowing effects can be avoided because only a single spectrum is used in the analysis and this may be taken at near normal emission angle. It is a rather robust means of determining atom depth distributions on the nanoscale both for large-area XPS analysis and for imaging. We critically discuss some of the techniques mentioned above and show that both ARXPS imaging and, particularly, XPS peak-shape analysis for 3D imaging of nanostructures are very promising techniques and open a gateway for visualizing nanostructures.
纳米结构的深度剖析在技术和基础研究方面都非常重要。因此,已经开发了许多不同的方法来确定原子的深度分布,例如离子束(例如 O(2)(+)、Ar(+))溅射、用于有机材料深度剖析的低损伤 C(60)团簇离子溅射、水滴团簇离子束深度剖析、离子探测技术(卢瑟福背散射光谱学(RBS)、二次离子质谱学(SIMS)和辉光放电发射光谱学(GDOES))、电子探针变化技术与蒙特卡罗计算相结合的 X 射线微分析、角分辨 XPS(ARXPS)和 X 射线光电子能谱(XPS)峰形分析。每种深度剖析技术都有其自身的优点和缺点。然而,在许多情况下,人们更喜欢使用非破坏性技术;其中包括 ARXPS 和 XPS 峰形分析。前者与平行因子分析相结合,适用于深入了解化学和形态学。它在平坦表面上效果很好,但在粗糙或纳米结构表面上则不行,因为存在阴影效应。在后一种方法中,可以避免阴影效应,因为在分析中仅使用单个光谱,并且可以在接近正常发射角处进行测量。这是一种非常稳健的方法,可以在纳米尺度上确定原子深度分布,无论是在大面积 XPS 分析还是成像方面。我们批判性地讨论了上述一些技术,并表明 ARXPS 成像,特别是 XPS 峰形分析对于纳米结构的 3D 成像,都是非常有前途的技术,并为可视化纳米结构开辟了道路。