Capron E D, Brill O L
Appl Opt. 1973 Mar 1;12(3):569-72. doi: 10.1364/AO.12.000569.
Room-temperature transmittance measurements at 10.6 microm were made of germanium single-crystal samples. The samples were cut from very large doped single-crystal slabs that had been grown from +40-?-cm charge material of unknown purity for use as infrared windows and image-forming elements. The dependence of the absorption coefficient on sample resistivity was calculated from measured transmittances of ninety-two samples with resistivities ranging from 0.9 ?-cm to 57 ?cm. Maximum transmittance at 10.6 microm was obtained for the samples that were doped to a resistivity of 5-10 ?-cm and n-type conductivity.
对锗单晶样品进行了10.6微米波长的室温透过率测量。这些样品是从非常大的掺杂单晶片上切割下来的，这些单晶片是由纯度未知的+40-？-厘米电荷材料生长而成，用作红外窗口和成像元件。根据92个电阻率范围从0.9？-厘米到57？厘米的样品的测量透过率，计算了吸收系数与样品电阻率的关系。对于掺杂至电阻率为5-10？-厘米且为n型导电率的样品，在10.6微米波长处获得了最大透过率。
