Zhao Wen-Feng, Chen Jun-Fang, Meng Ran
School of Physics and Telecommunications Engineering, Laboratory of Quantum Information Technology, South China Normal University, Guangzhou 510006, China.
Guang Pu Xue Yu Guang Pu Fen Xi. 2009 Nov;29(11):3134-7.
In order to control the ion density and energy distribution in the vicinity of plasma sheath independently, the inductively coupled plasma and its glow discharge mechanism in the vicinity of plasma sheath were studied by means of optical emission spectroscopy (OES) under different RF power, different discharge and different substrate DC bias voltage. It was shown that the ion density is higher and the electron temperature is lower in the vicinity of inductively coupled plasma sheath according to the ionic line and atomic line. With changing the discharge pressure and RF power, the spectral characteristics analysis shows that the ion density in the vicinity of plasma sheath linearly increases with the RF power and rises with the pressure under the low pressure. The atomic spectral intensity of low excitation states increases rapidly. The atomic spectral intensity of high excitation states rises slowly and the intensity of ion spectrum increases not obviously. By applying the DC bias voltage to substrate, the intensity of emission spectroscopy was analyzed. The result shows that the intensity of spectra rises with the increase in positive bias voltage, while first reduces then increases with the increase in negative bias voltage, and is the weakest in the case of DC bias at -30 V. This shows that the fast ions and the electrons are the main source of energy for Ar ionization and excitation.
为了独立控制等离子体鞘层附近的离子密度和能量分布，采用发射光谱法（OES），在不同射频功率、不同放电条件及不同衬底直流偏压下，研究了等离子体鞘层附近的电感耦合等离子体及其辉光放电机制。根据离子线和原子线可知，电感耦合等离子体鞘层附近的离子密度较高，电子温度较低。通过改变放电压力和射频功率进行光谱特性分析表明，等离子体鞘层附近的离子密度随射频功率线性增加，在低压下随压力升高。低激发态的原子光谱强度迅速增加。高激发态的原子光谱强度缓慢上升，离子光谱强度增加不明显。通过对衬底施加直流偏压，分析发射光谱强度。结果表明，光谱强度随正偏压的增加而升高，随负偏压的增加先降低后升高，在直流偏压为-30V时最弱。这表明快离子和电子是氩电离和激发的主要能量来源。
