State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, China.
J Am Chem Soc. 2010 Feb 17;132(6):1768-9. doi: 10.1021/ja909888v.
Here we report a facile method to fabricate highly b-oriented and submicrometer thin MFI films on substrates. Neither an anhydrous environment nor a specifically designed structure-directing agent (SDA) is required in the whole process, and by innovation of the secondary growth process, twin growth of the b-oriented seed layer is effectively suppressed with TPAOH as the SDA for the first time. Furthermore, various substrates with different surface conditions can be directly used as substrates without premodification. A Pt electrode also was successfully used as a substrate to grow this high quality MFI film, showing excellent molecular sieving ability in aqueous solution.
在这里，我们报告了一种在基底上制备高度取向和亚微米级 MFI 薄膜的简便方法。整个过程既不需要无水环境也不需要专门设计的结构导向剂（SDA），通过对二次生长过程的创新，首次以 TPAOH 作为 SDA 有效地抑制了 b 取向种子层的孪晶生长。此外，各种具有不同表面条件的基底可以不经预处理直接用作基底。Pt 电极也成功地用作基底来生长这种高质量的 MFI 薄膜，在水溶液中显示出优异的分子筛能力。
