Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA.
Nano Lett. 2010 Mar 10;10(3):1032-6. doi: 10.1021/nl904260k.
We report a one-step direct transfer technique for the fabrication of functional nanoelectronic devices using pristine single-walled carbon nanotubes (SWNTs). Suspended SWNTs grown by the chemical vapor deposition (CVD) method are aligned and directly transferred onto prepatterned device electrodes at ambient temperature. Using this technique, we successfully fabricated SWNT electromechanical resonators with gate-tunable resonance frequencies. A fully suspended SWNT p-n diode has also been demonstrated with the diode ideality factor equal to 1. Our method eliminates the organic residues on SWNTs resulting from conventional lithography and solution processing. The results open up opportunities for the fundamental study of electron transport physics in ultraclean SWNTs and for room temperature fabrication of novel functional devices based on pristine SWNTs.
我们报告了一种使用原始单壁碳纳米管(SWNTs)制造功能纳米电子器件的一步直接转移技术。通过化学气相沉积(CVD)方法生长的悬浮 SWNTs 在环境温度下被对准并直接转移到预图案化的器件电极上。使用该技术,我们成功地制造了具有栅极可调谐共振频率的 SWNT 机电谐振器。还展示了具有等于 1 的二极管理想因子的全悬浮 SWNT p-n 二极管。我们的方法消除了传统光刻和溶液处理在 SWNTs 上产生的有机残留物。这些结果为在超洁净 SWNTs 中研究电子输运物理的基础以及基于原始 SWNTs 在室温下制造新型功能器件开辟了机会。