Heitmann W
Appl Opt. 1971 Dec 1;10(12):2685-9. doi: 10.1364/AO.10.002685.
Films of SiO(2), SiO(x)N(y), and TiO(2), were prepared by reactive evaporation in ionized gases. Refractive index, absorptance, ir transmittance, stability, structure, and stress of these films were investigated. The SiO(2) films had the same refractive index as bulk quartz glass and an absorption coefficient of less than 40 cm(-1) at 190 nm. The internal stress in the SiO(2) films was considerably lower than that for silicon oxide films prepared by conventional reactive evaporation. SiO(x)N(y), films formed extremely smooth surfaces when heated in air after evaporation. On unheated substrates TiO(2) films with refractive indices up to 2.3 and an absorption coefficient of less than 40 cm(-1) at 633 nm were obtained. All films were x-ray amorphous and proved to be mechanically stable and water resistant.
通过在电离气体中进行反应蒸发制备了SiO₂、SiOₓNᵧ和TiO₂薄膜。研究了这些薄膜的折射率、吸收率、红外透射率、稳定性、结构和应力。SiO₂薄膜的折射率与块状石英玻璃相同,在190nm处的吸收系数小于40cm⁻¹。SiO₂薄膜中的内应力远低于通过传统反应蒸发制备的氧化硅薄膜。SiOₓNᵧ薄膜在蒸发后于空气中加热时形成极其光滑的表面。在未加热的衬底上获得了折射率高达2.3且在633nm处吸收系数小于40cm⁻¹的TiO₂薄膜。所有薄膜均为X射线非晶态,且被证明具有机械稳定性和防水性。