Bradford A P, Hass G, Heaney J B, Triolo J J
Appl Opt. 1970 Feb 1;9(2):339-44. doi: 10.1364/AO.9.000339.
The solar absorptivity (alpha) and the total normal and hemispherical emissivities (? (n) and ?) of vacuum deposited Al coated with silicon oxide films prepared by evaporation of SiO were determined. For Al coated with true SiO films evaporated at 5 x 10(-7) Torr and deposited at rates >30 A/sec, both and e increase but alpha/? decreases more rapidly with increasing SiO thickness. Such coatings were found to be very stable under simulated space conditions, but they should not be used as temperature control coatings since their alpha, ? and alpha/? values are for most applications too high. The proper way to produce silicon oxide films on Al for temperature control coatings is reactive evaporation of SiO in the presence of oxygen followed by an uv treatment in air. Aluminum surfaces coated with such films have predictable alpha values of 11.0%-11.5% which remain essentially independent of the silicon oxide thickness. By increasing the thickness of reactively deposited silicon oxide on Al from zero to 2.96 micro, ? increases from 0.017 to 0.53, and alpha/? decreases from about 5 to 0.2. Such coatings have been successfully used as temperature control surfaces on many satellites, and there are ample laboratory and flight data to assure their high stability in space environment.
测定了通过蒸发SiO制备的涂有氧化硅薄膜的真空沉积铝的太阳吸收率（α）以及总法向发射率和半球发射率（ε(n)和ε）。对于在5×10(-7)托下蒸发并以大于30埃/秒的速率沉积的涂有纯SiO薄膜的铝，α和ε均增加，但随着SiO厚度的增加，α/ε下降得更快。发现这种涂层在模拟空间条件下非常稳定，但由于其α、ε和α/ε值对于大多数应用来说过高，因此不应将其用作温控涂层。在铝上制备用于温控涂层的氧化硅薄膜的正确方法是在氧气存在下对SiO进行反应蒸发，然后在空气中进行紫外线处理。涂有这种薄膜的铝表面具有可预测的α值，为11.0%-11.5%，且基本上与氧化硅厚度无关。通过将铝上反应沉积的氧化硅厚度从零增加到2.96微米，ε从0.017增加到0.53，α/ε从约5降低到0.2。这种涂层已成功用作许多卫星上的温控表面，并且有大量的实验室和飞行数据确保其在空间环境中的高稳定性。
