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退火对 P3HT:PCBM 电荷转移和超快光谱探测的纳米形貌的影响。

Effect of annealing on P3HT:PCBM charge transfer and nanoscale morphology probed by ultrafast spectroscopy.

机构信息

Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB3 0HE, United Kingdom.

出版信息

Nano Lett. 2010 Mar 10;10(3):923-30. doi: 10.1021/nl9038289.

Abstract

We employ sub-picosecond TA spectroscopy on operating P3HT:PCBM devices to probe the effect of annealing on charge transfer dynamics and nanoscale morphology. Our measurement configuration allows us to remove the effect of high excitation densities that would otherwise dominate. Charge transfer in pristine P3HT:PCBM devices proceeds on a sub-picosecond time scale, implying molecular level intermixing and explaining the more localized character of excitons and charges. In annealed devices, annealing results in diffusion-limited charge generation with a half-life time of approximately 3 ps, complete only after 30 ps. This is the result of exclusion of PCBM molecules and ordering of P3HT domains and is correlated with improved photovoltaic efficiency. We are able to use the spectra and dynamics of optical excitations themselves to interpret blend morphologies on the appropriate time- and length scales of photoinduced charge generation.

摘要

我们在运行的 P3HT:PCBM 器件上使用亚皮秒 TA 光谱来探测退火对电荷转移动力学和纳米级形貌的影响。我们的测量配置允许我们去除原本会占主导地位的高激发密度的影响。原始 P3HT:PCBM 器件中的电荷转移在亚皮秒时间尺度上进行,这意味着分子水平的混合,并解释了激子和电荷的更局部化特征。在退火器件中,退火导致扩散限制的电荷生成,半衰期约为 3 ps,在 30 ps 后才完全完成。这是 PCBM 分子被排除和 P3HT 域有序化的结果,与光伏效率的提高有关。我们能够使用光学激发本身的光谱和动力学来解释光诱导电荷生成的适当时间和长度尺度上的混合物形貌。

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