State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China.
Nanoscale. 2011 May;3(5):2280-5. doi: 10.1039/c0nr01002b. Epub 2011 Apr 13.
Exciton quenching dynamics has been systematically studied in pristine P3HT and nano phase separated P3HT/PCBM blend films under various excitation intensities by femtosecond fluorescence up-conversion technique. The behaviors of excitons in the films can be well described by a three-dimensional diffusion model. The small diffusion length and large charge transfer radius indicate that excitons reach the interface most likely by the delocalization of the excitons in P3HT fibrillar at a range of 4.8-9 nm so that the excitons can quickly delocalize in the P3HT domain to reach the interface (instead of by diffusion).
通过飞秒荧光上转换技术,系统地研究了在不同激发强度下,原始 P3HT 和纳米相分离 P3HT/PCBM 共混膜中的激子猝灭动力学。通过三维扩散模型可以很好地描述薄膜中的激子行为。小的扩散长度和大的电荷转移半径表明,激子最有可能通过在 4.8-9nm 的范围内 P3HT 纤维中的激子离域到达界面,从而使激子能够在 P3HT 域中快速离域以到达界面(而不是通过扩散)。