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多能性相关基因在培养的人胚胎干细胞存活部分中的表达不受电离辐射的显著影响。

Expression of pluripotency-associated genes in the surviving fraction of cultured human embryonic stem cells is not significantly affected by ionizing radiation.

机构信息

Radiology and Imaging Sciences, Clinical Center, National Institutes of Health, Bethesda, Maryland 20892, USA.

出版信息

Gene. 2010 May 1;455(1-2):8-15. doi: 10.1016/j.gene.2010.01.006. Epub 2010 Feb 1.

Abstract

Human embryonic stem cells (hESC) are capable to give rise to all cell types in the human body during the normal course of development. Therefore, these cells hold a great promise in regenerative cell replacement based therapeutical approaches. However, some controversy exists in literature concerning the ultimate fate of hESC after exposure to genotoxic agents, in particular, regarding the effect of DNA damaging insults on pluripotency of hESC. To comprehensively address this issue, we performed an analysis of the expression of marker genes, associated with pluripotent state of hESC, such as Oct-4, Nanog, Sox-2, SSEA-4, TERT, TRA-1-60 and TRA-1-81 up to 65h after exposure to ionizing radiation (IR) using flow cytometry, immunocytochemistry and quantitative real-time polymerase chain reaction techniques. We show that irradiation with relatively low doses of gamma-radiation (0.2Gy and 1Gy) does not lead to loss of expression of the pluripotency-associated markers in the surviving hESC. While changes in the levels of expression of some of the pluripotency markers were observed at different time points after IR exposure, these alterations were not persistent, and, in most cases, the expression of the pluripotency-associated markers remained significantly higher than that observed in fully differentiated human fibroblasts, and in hESCs differentiated into definitive endodermal lineage. Our data suggest that exposure of hESC to relatively low doses of IR as a model genotoxic agent does not significantly affect pluripotency of the surviving fraction of hESC.

摘要

人类胚胎干细胞(hESC)在正常发育过程中能够产生人体所有类型的细胞。因此,这些细胞在基于再生细胞替代的治疗方法中具有巨大的应用前景。然而,文献中对于 hESC 在暴露于遗传毒性剂后最终命运存在一些争议,特别是关于 DNA 损伤对 hESC 多能性的影响。为了全面解决这个问题,我们使用流式细胞术、免疫细胞化学和实时定量聚合酶链反应技术,分析了暴露于电离辐射(IR)后 hESC 多能性相关标记基因(如 Oct-4、Nanog、Sox-2、SSEA-4、TERT、TRA-1-60 和 TRA-1-81)的表达,时间长达 65 小时。结果显示,低剂量的γ射线(0.2Gy 和 1Gy)照射不会导致存活的 hESC 中多能性相关标记物的表达丧失。虽然在 IR 暴露后的不同时间点观察到一些多能性标记物的表达水平发生变化,但这些变化不是持续的,在大多数情况下,多能性相关标记物的表达仍然明显高于完全分化的人成纤维细胞和分化为确定的内胚层谱系的 hESC。我们的数据表明,暴露于相对低剂量的 IR 作为遗传毒性剂不会显著影响存活的 hESC 亚群的多能性。

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