Kipnusu Wycliffe K, Katana Gabriel, Migwi Charles M, Rathore I V S, Sangoro Joshua R
Physics Department, Kenyatta University, P.O. Box 43844-00100, Nairobi, Kenya.
Int J Biomater. 2009;2009:548406. doi: 10.1155/2009/548406. Epub 2009 Jul 22.
Metal-sample-metal sandwich configuration has been used to investigate DC conductivity in 4 mum thick Nandi flame [Spathodea campanulata P. Beauv.] seed cuticles. J-V characteristics showed ohmic conduction at low fields and space charge limited current at high fields. Charge mobility in ohmic region was 4.06 x 10(-5) (m(2)V(-1)s(-1)). Temperature-dependent conductivity measurements have been carried out in the temperature range 320 K < T > 450 K. Activation energy within a temperature of 320 K-440 K was about 0.86 eV. Variable range hopping (VRH) is the main current transport mechanism at the range of 330-440 K. The VRH mechanism was analyzed based on Mott theory and the Mott parameters: density of localized states near the Fermi-level N(E(F)) approximately 9.04 x 10(19) (eV(-1)cm(-3)) and hopping distance R approximately 1.44 x 10(-7) cm, while the hopping energy (W) was in the range of 0.72 eV-0.98 eV.
金属-样品-金属三明治结构已被用于研究4微米厚的南迪火焰木(火焰木属)种子表皮的直流电导率。电流-电压特性在低场下显示出欧姆传导,在高场下显示出空间电荷限制电流。欧姆区域的电荷迁移率为4.06×10⁻⁵(米²伏⁻¹秒⁻¹)。在320K<T>450K的温度范围内进行了与温度相关的电导率测量。在320K - 440K的温度范围内,激活能约为0.86电子伏特。变程跳跃(VRH)是330 - 440K范围内主要的电流传输机制。基于莫特理论和莫特参数对VRH机制进行了分析:费米能级附近的局域态密度N(E(F))约为9.04×10¹⁹(电子伏特⁻¹厘米⁻³),跳跃距离R约为1.44×10⁻⁷厘米,而跳跃能量(W)在0.72电子伏特 - 0.98电子伏特范围内。