Laboratoire de Physique et Chimie des Interfaces, Faculté des Sciences, Monastir 5000, Tunisia.
Langmuir. 2010 May 18;26(10):7165-73. doi: 10.1021/la904251m.
In this report, we have introduced a revision of the chemical treatment influence on the surface thermodynamic properties of silicon dioxide (SiO(2)) and silicon nitride (Si(3)N(4)) solid thin layers. Some characterization techniques might be used to quantify the thermodynamic properties of solid surface and predict its ability in the adhesion phenomenon. In this work, we have used static and dynamic contact angle (CA) measurements to characterize both dioxide solid surfaces being treated by using the two procedures of cleaning and chemical activation. Qualitative and quantitative concepts of analysis, using the Van Oss approach, are based on the determination of dioxide surface hydrophilic and hydrophobic features and the thermodynamic parameters such as free energy, acid, base, and Lewis acid-base surface tension components. Electrochemical capacitance-potential measurements were carried out to study the reactivity of both silicon dioxide and silicon nitride surfaces for pH variation. Furthermore, the surface roughness of these insulators was examined by using the contact angle hysteresis (CAH) measurements and atomic force microscopy (AFM). It was concluded that CA technique can be used as a suitable and base method for the understanding of surface wettability and for the control of surface wetting behavior.
在本报告中，我们介绍了一种对二氧化硅（SiO2）和氮化硅（Si3N4）固体薄膜的化学处理影响的修正。一些特征化技术可能被用于量化固体表面的热力学性质并预测其在粘附现象中的能力。在这项工作中，我们使用静态和动态接触角（CA）测量来表征两种被两种清洁和化学激活程序处理的二氧化硅固体表面。定性和定量的分析概念，使用 Van Oss 方法，基于确定二氧化硅表面的亲水和疏水特征以及热力学参数，如自由能、酸、碱和路易斯酸碱表面张力分量。电化学电容-电位测量被用于研究二氧化硅和氮化硅表面的反应性，以适应 pH 值的变化。此外，这些绝缘体的表面粗糙度通过接触角滞后（CAH）测量和原子力显微镜（AFM）进行了检查。结果表明，CA 技术可作为一种合适的基本方法，用于理解表面润湿性并控制表面润湿行为。
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