10.6微米波长的砷化镓光波导结构

GaAs optical waveguide structures at 10.6-microm wavelength.

作者信息

Chang M S, Chang W S, Sopori B L, Vann H R, Muller M W, Craford M G, Finn D, Groves W O, Herzog A H

出版信息

Appl Opt. 1975 Jul 1;14(7):1572-8. doi: 10.1364/AO.14.001572.

DOI:10.1364/AO.14.001572

PMID:20154873

Abstract

A comparison of GaAs/n(+)GaAs, GaAs/GaAsP, and GaAs/AlGaAs waveguide structures is presented. Their fabrication processes and their transmission properties at 10.6-microm wavelength are described. The loss due to the free carrier absorption of the substrate is analyzed. Experimentally, an attenuation rate of 2 dB/cm in a single mode (~7 microm) GaAs/GaAsp waveguide with a maximum dimension of the order of 7 cm has been achieved.

摘要

本文对砷化镓/n(+)砷化镓、砷化镓/砷化镓磷以及砷化镓/铝镓砷波导结构进行了比较。描述了它们的制造工艺以及在10.6微米波长下的传输特性。分析了由于衬底的自由载流子吸收导致的损耗。实验上，在最大尺寸约为7厘米的单模（~7微米）砷化镓/砷化镓磷波导中实现了2分贝/厘米的衰减率。