外延（Ga(x)In(1-x)）As中的离子注入光电二极管探测器。

Ion implanted photodiode detectors in epitaxial (Ga(x) In(1-x))As.

作者信息

Ajmera P K, Hauser J R

出版信息

Appl Opt. 1975 Dec 1;14(12):2905-10. doi: 10.1364/AO.14.002905.

DOI:10.1364/AO.14.002905

PMID:20155130

Abstract

Ion implanted p-n junction photodiodes in epitaxially grown (Ga(x) In(1-x))As material are reported on here. Photoresponse in these diodes was investigated for approximately the entire composition range of 0 < x < 1. High values for quantum efficiency were obtained for the devices with a high value of x. Peak D()(lambda,f) of greater than 10(11) [cm(Hz)(1/2)/W] at room temperature was obtained at 0.8-microm wavelength, while a peak D()(lambda,f) of 5 x 10(10) [cm(Hz)(1/2)/W] was obtained at 165 K at 1.4-microm wavelength.

摘要

本文报道了在 epitaxially grown（Ga(x)In(1 - x)）As 材料中离子注入的 p - n 结光电二极管。对这些二极管在 0 < x < 1 的大致整个成分范围内的光响应进行了研究。对于 x 值较高的器件，获得了高量子效率值。在室温下，在 0.8 微米波长处获得了大于 10(11) [cm(Hz)(1/2)/W] 的峰值 D()(λ,f)，而在 165 K 时，在 1.4 微米波长处获得了 5 x 10(10) [cm(Hz)(1/2)/W] 的峰值 D()(λ,f)。