Soderman D A, Pinkston W H
Appl Opt. 1972 Oct 1;11(10):2162-8. doi: 10.1364/AO.11.002162.
Sensitive high speed photodiode detectors have been prepared in various compositions of (Hg,Cd)Te for the 1-micro to 3-micro spectral region. These detectors, operating at room temperature, exhibit quantum efficiencies in the 40-70% range and specific detectivities that range from 3 x 10(11) cm Hz((1/2))/W at 1.3 micro to 5 x 10(9) cm Hz((1/2))/W at 3 micro. Improved performance is possible by cooling the photodiode detector; specific detectivities of 2 x 10(12) cm Hz((1/2))/W approaching the BLIP limit at 2.2 micro have been measured at 77 K. Response time measurements using detector-preamplifier modules have been made with 0.9 <, 1.06 micro, and 1.54-micro, pulsed radiation. The response time of approximately 10 nsec does not appear wavelength-dependent and is limited by the RC product and amplifier bandwidth. When the photodiode is terminated with a very broadband amplifier, the pulse response is limited by the RC product to 0.5 nsec and a secondary time constant of ~5 nsec is observed that is believed to be caused by the transit time of stored charge carriers.
已采用多种成分的碲镉汞制备出灵敏的高速光电二极管探测器，用于1微米至3微米的光谱区域。这些探测器在室温下工作，量子效率在40%至70%范围内，比探测率在1.3微米时为3×10¹¹厘米·赫兹¹/²/瓦，在3微米时为5×10⁹厘米·赫兹¹/²/瓦。通过冷却光电二极管探测器可提高性能；在77K时，已测得在2.2微米处比探测率为2×10¹²厘米·赫兹¹/²/瓦，接近背景限。使用探测器 - 前置放大器模块对0.9微米、1.06微米和1.54微米的脉冲辐射进行了响应时间测量。约10纳秒的响应时间似乎与波长无关，且受RC时间常数和放大器带宽限制。当光电二极管连接一个非常宽带的放大器时，脉冲响应受RC时间常数限制为0.5纳秒，并且观察到一个约5纳秒的二次时间常数，据信这是由存储电荷载流子的渡越时间引起的。
