Gustafsson Oscar, Karim Amir, Berggren Jesper, Wang Qin, Reuterskiöld-Hedlund Carl, Ernerheim-Jokumsen Christopher, Soldemo Markus, Weissenrieder Jonas, Persson Sirpa, Almqvist Susanne, Ekenberg Ulf, Noharet Bertrand, Asplund Carl, Göthelid Mats, Andersson Jan Y, Hammar Mattias
KTH Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden.
Opt Express. 2012 Sep 10;20(19):21264-71. doi: 10.1364/OE.20.021264.
InSb-based quantum dots grown by metal-organic vapor-phase epitaxy (MOVPE) on InAs substrates are studied for use as the active material in interband photon detectors. Long-wavelength infrared (LWIR) photoluminescence is demonstrated with peak emission at 8.5 µm and photoresponse, interpreted to originate from type-II interband transitions in a p-i-n photodiode, was measured up to 6 µm, both at 80 K. The possibilities and benefits of operation in the LWIR range (8-12 µm) are discussed and the results suggest that InSb-based quantum dot structures can be suitable candidates for photon detection in the LWIR regime.
研究了通过金属有机气相外延（MOVPE）在砷化铟（InAs）衬底上生长的锑化铟（InSb）基量子点，以用作带间光子探测器的活性材料。在80K温度下，展示了长波长红外（LWIR）光致发光，其峰值发射波长为8.5μm，并测量了直至6μm的光响应，该光响应被解释为源自p-i-n光电二极管中的II型带间跃迁。讨论了在LWIR范围（8-12μm）内运行的可能性和益处，结果表明InSb基量子点结构可能是LWIR波段光子探测的合适候选材料。
