Austin S, Stone F T
Appl Opt. 1976 Apr 1;15(4):1071-4. doi: 10.1364/AO.15.001071.
We present a technique for designing holo-graphically fabricated structures in photoresist. A method is given for obtaining a suitable initial resist thickness. The etch depth (Deltat) vs exposure (E) characteristic is determined experimentally for a fixed development time (T). The characteristics for other values of T are found using the linearity of Deltat with T. Whole families of grating profiles can then be generated by using a polynomial fit to the exposure characteristics. For example, using a single holographic exposure plus an optional uniform preexposure, a family of grating profiles is obtained by varying the parameter T. A desired profile can thus be realized by a suitable combination of initial resist thickness, exposure, and development time. Residual resist layers may be eliminated by this method thereby minimizing scattering and other losses. Experimental verification of the various features of the model is given.
我们展示了一种在光刻胶中设计全息制造结构的技术。给出了一种获得合适初始光刻胶厚度的方法。对于固定的显影时间（T），通过实验确定蚀刻深度（Δt）与曝光量（E）的特性。利用Δt与T的线性关系找到其他T值的特性。然后通过对曝光特性进行多项式拟合来生成整个光栅轮廓族。例如，使用单次全息曝光加上可选的均匀预曝光，通过改变参数T可获得一族光栅轮廓。因此，通过初始光刻胶厚度、曝光量和显影时间的适当组合可以实现所需的轮廓。通过这种方法可以消除残留的光刻胶层，从而将散射和其他损耗降至最低。给出了该模型各种特性的实验验证。
