Tsang W T
Appl Opt. 1977 Jul 1;16(7):1918-30. doi: 10.1364/AO.16.001918.
The simultaneous exposure and development (SED) process for a positive photoresist, when exposed to a uniform incident flux and to a real image with a nonuniform transverse intensity distribution, is mathematically simulated. The calculation is done for photoresist on optically matched and unmatched substrates while varying the incident radiation intensity, the initial resist thickness, and developer concentration. The results of the calculation and several experiments with SED produced gratings suggest that SED will yieldhigher contrast than the usual expose-and-then-develop (E-D) process. Furthermore, the standing wave effect in the photoresist films coated on reflective substrates is minimized and decreases with depth into the films when the SED process is used.
针对正性光刻胶的同时曝光与显影（SED）过程，在其暴露于均匀入射通量以及具有非均匀横向强度分布的实像时，进行了数学模拟。在改变入射辐射强度、初始光刻胶厚度和显影剂浓度的同时，对光学匹配和不匹配基板上的光刻胶进行了计算。计算结果以及使用SED制作光栅的若干实验表明，与常规的先曝光后显影（E-D）过程相比，SED将产生更高的对比度。此外，当使用SED过程时，涂覆在反射基板上的光刻胶膜中的驻波效应最小化，并且随着深入膜层而减小。
