Valette S, Labrunie G, Deutsch J C, Lizet J
Appl Opt. 1977 May 1;16(5):1289-96. doi: 10.1364/AO.16.001289.
The optical properties of ZnTe in the visible and the ir and the possibilities of realizing waveguides by ion implantation were investigated in this semiconductor. The main characteristics of the refractive index profiles obtained by implantation of light ions (proton, helium, boron) vs dose, energy, thermal annealing, and wavelength are presented. It is shown that these waveguides are the result of both the macroscopic implantation and the microscopic properties of ZnTe where the damages induced by this implantation extend deep into the substrate. This explains the low losses (1-4 dB/cm) measured in these waveguides. A first physical interpretation of the results is proposed, and some assumptions are discussed.
研究了碲化锌在可见光和红外光区域的光学特性以及通过离子注入实现波导的可能性。给出了通过注入轻离子（质子、氦离子、硼离子）获得的折射率分布随剂量、能量、热退火和波长变化的主要特征。结果表明，这些波导是宏观注入和碲化锌微观特性共同作用的结果，注入所引起的损伤深入到衬底内部。这就解释了在这些波导中测得的低损耗（1 - 4分贝/厘米）。文中提出了对结果的第一种物理解释，并讨论了一些假设。
