Bruno F, Guidice M D, Recca R, Testa F
Appl Opt. 1991 Nov 1;30(31):4560-4. doi: 10.1364/AO.30.004560.
Good optical-quality SiON layers deposited upon a SiO(2) buffer layer placed upon silicon wafers have been obtained by using plasma-enhanced chemical vapor deposition from SiH(4), NH(3), and N(2)O. Optical planar waveguides with a thickness of 5 microm and a refractive index of 1.470 have been deposited and investigated in the wavelength region of 1.3-1.6 microm. Three absorption bands at 1.40, 1.48, and 1.54 microm have been detected and interpreted as Si-OH, N-H, and Si-H vibrational modes, respectively. Absorption losses of 3.8 dB/cm at 1.4 microm and 3.2 dB/cm at 1.51 microm have been measured. A mild annealing at approximately 800 degrees C completely removes the band at 1.40 microm, whereas strong reduction of absorption at 1.51 microm requires 3 h of annealing at 1100 degrees C. As a result, propagation losses of 0.36 to 0.54 dB/cm have been measured at 1.54-microm wavelength.
通过使用等离子体增强化学气相沉积法，以硅烷（SiH₄）、氨气（NH₃）和一氧化二氮（N₂O）为原料，在置于硅片上的二氧化硅（SiO₂）缓冲层上沉积出了光学质量良好的氮氧化硅（SiON）层。已沉积了厚度为5微米、折射率为1.470的光学平面波导，并在1.3 - 1.6微米波长区域内进行了研究。检测到了分别位于1.40、1.48和1.54微米处的三个吸收带，并分别解释为硅 - 羟基（Si - OH）、氮 - 氢（N - H）和硅 - 氢（Si - H）振动模式。测量得到在1.4微米处的吸收损耗为3.8分贝/厘米，在1.51微米处为3.2分贝/厘米。在约800℃下进行温和退火可完全消除1.40微米处的吸收带，而在1.51微米处大幅降低吸收则需要在1100℃下退火3小时。结果，在1.54微米波长处测量到的传播损耗为0.36至0.54分贝/厘米。
