Department of ECE, Northeastern University, Boston, MA 02115, USA.
IET Nanobiotechnol. 2010 Mar;4(1):19-28. doi: 10.1049/iet-nbt.2009.0013.
Self-assembly has been employed in nano-technology to build crystals using individual components (commonly referred to as tiles) with limited control. Templates of regular lattice structures for two-dimensional scaffolds and interconnects have been recently implemented by self-assembly. This study proposes a diagonally based growth scheme that is applicable to these templates of interconnects (as an example). Differently from previous techniques (mostly sequential in execution), growth is allowed along two different directions in the aggregate, thus permitting a parallel mode of operation. This is made possible by utilising a tile set and binding scheme to allow multiple seed tiles to grow along the main diagonal of the pattern. The conditions by which this type of new growth is possible at a reduced error occurrence in mismatched tiles, are presented; error tolerance is achieved by employing healing and so-called robust generation of the seed tiles, thus ensuring that pattern growth is controlled along both directions. Simulation results are presented under different scenarios of growth direction (inclusive of backward growth for healing).
自组装已被应用于纳米技术中，使用具有有限控制能力的单个组件（通常称为瓦片）来构建晶体。最近，通过自组装实现了二维支架和互连的规则晶格结构的模板。本研究提出了一种基于对角线的生长方案，该方案适用于这些互连模板（例如）。与以前的技术（主要是顺序执行）不同，在聚合体中允许沿两个不同的方向生长，从而允许并行操作模式。这是通过利用瓦片集和绑定方案来实现的，该方案允许多个种子瓦片沿着图案的主对角线生长。提出了在减少不匹配瓦片错误发生的情况下实现这种新型生长的条件；通过使用修复和所谓的种子瓦片的稳健生成来实现容错，从而确保图案生长沿着两个方向都受到控制。在不同的生长方向场景下（包括修复的回溯生长）呈现了模拟结果。
