Chen Deyuan, Liu Yu, Xu Jun, Wei Deyuan, Sun Hongcheng, Xu Ling, Wang Tao, Li Wei, Chen Kunji
Nanjing National Laboratory of Microstructures and Key Laboratory of Advanced Photonic and Electronic materials, Department of Physics, Nanjing University, Nanjing, China.
Opt Express. 2010 Jan 18;18(2):917-22. doi: 10.1364/OE.18.000917.
Nanocrystalline Si/SiO(2) multilayers-based electroluminescent devices were prepared on nano-patterned p-Si substrates which were fabricated by nano-sphere lithography technique. The formed nano-patterned substrate contains periodic Si nano-cone arrays with the height of 80 approximately 95 nm and the diameter around 220 nm. The turn-on voltage of the luminescent device prepared on nano-patterned substrate is 3 V while the electroluminescence intensity is increased by over one order of magnitude compared to that of device prepared on flat substrate. The enhancement of the light emission can be attributed to the improved extraction efficiency of emission light as well as the high carrier-injection efficiency.
基于纳米晶Si/SiO₂多层结构的电致发光器件是在通过纳米球光刻技术制备的纳米图案化p-Si衬底上制备的。形成的纳米图案化衬底包含高度约为80至95nm、直径约为220nm的周期性Si纳米锥阵列。在纳米图案化衬底上制备的发光器件的开启电压为3V，而与在平坦衬底上制备的器件相比，电致发光强度提高了一个多数量级。发光增强可归因于发射光提取效率的提高以及高载流子注入效率。
