Shelton D J, Peters D W, Sinclair M B, Brener I, Warne L K, Basilio L I, Coffey K R, Boreman G D
CREOL, University of Central Florida, Orlando, FL 32816-2700, USA.
Opt Express. 2010 Jan 18;18(2):1085-90. doi: 10.1364/OE.18.001085.
Infrared metamaterials fabricated on semiconductor substrates exhibit a high degree of sensitivity to very thin (as small as 2 nm) layers of low permittivity materials between the metallic elements and the underlying substrate. We have measured the resonant frequencies of split ring resonators and square loops fabricated on Si wafers with silicon dioxide thicknesses ranging from 0 to 10 nm. Resonance features blue shift with increasing silicon dioxide thickness. These effects are explained by the silicon dioxide layer forming a series capacitance to the fringing field across the elements. Resonance coupling to the Si-O vibrational absorption has been observed. Native oxide layers which are normally ignored in numerical simulations of metamaterials must be accounted for to produce accurate predictions.
在半导体衬底上制造的红外超材料对金属元件与下层衬底之间非常薄（小至2纳米）的低介电常数材料层表现出高度敏感性。我们测量了在二氧化硅厚度范围为0至10纳米的硅片上制造的裂环谐振器和方环的谐振频率。随着二氧化硅厚度增加，谐振特性发生蓝移。这些效应可通过二氧化硅层对元件周围边缘场形成串联电容来解释。已观察到与Si-O振动吸收的谐振耦合。在超材料的数值模拟中通常被忽略的原生氧化层必须加以考虑才能得出准确预测结果。
