Xie Xiuhua, Zhang Zhenzhong, Li Binghui, Wang Shuangpeng, Jiang Mingming, Shan Chongxin, Zhao Dongxu, Chen Hongyu, Shen Dezhen
Opt Express. 2014 Jan 13;22(1):246-53. doi: 10.1364/OE.22.000246.
We report on gallium (Ga) doped cubic MgZnO films, which have been grown by metal organic chemical vapor deposition. It was demonstrated that Ga doping improves the n-type conduction of the cubic MgZnO films. A two-orders of magnitude enhancement in lateral n-type conduction have been achieved for the cubic MgZnO films. The responsivity of the cubic MgZnO-based photodetector has been also enhanced. Depletion region electric field intensity enhanced model was adopted to explain the improvement of quantum efficiency in Ga doped MgZnO-based detectors.
我们报道了通过金属有机化学气相沉积法生长的镓（Ga）掺杂立方相MgZnO薄膜。结果表明，Ga掺杂改善了立方相MgZnO薄膜的n型导电性。立方相MgZnO薄膜的横向n型导电性提高了两个数量级。基于立方相MgZnO的光电探测器的响应度也得到了提高。采用耗尽区电场强度增强模型来解释Ga掺杂MgZnO基探测器量子效率的提高。
