Parhizkar Shayan, Prechtl Maximilian, Giesecke Anna Lena, Suckow Stephan, Wahl Sophia, Lukas Sebastian, Hartwig Oliver, Negm Nour, Quellmalz Arne, Gylfason Kristinn, Schall Daniel, Wuttig Matthias, Duesberg Georg S, Lemme Max C
Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 2, 52074 Aachen, Germany.
AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany.
ACS Photonics. 2022 Mar 16;9(3):859-867. doi: 10.1021/acsphotonics.1c01517. Epub 2022 Mar 4.
Low-cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic-integrated circuits (PICs), especially for wavelengths above 1.8 μm. Multilayered platinum diselenide (PtSe) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450 °C. We integrate PtSe-based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 μs. Fourier-transform IR spectroscopy in the wavelength range from 1.25 to 28 μm indicates the suitability of PtSe for PDs far into the IR wavelength range. Our PtSe PDs integrated by direct growth outperform PtSe PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility makes PtSe an attractive 2D material for optoelectronics and PICs.
用于硅光子学的低成本、易于集成的光电探测器(PD)仍然是光子集成电路(PIC)的一个瓶颈,特别是对于波长大于1.8μm的情况。多层二硒化铂(PtSe₂)是一种半金属二维(2D)材料,可在450°C以下合成。我们通过在硅波导上共形生长直接集成基于PtSe₂的PD。这些PD在1550nm波长下工作,最大响应度为11mA/W,响应时间低于8.4μs。在1.25至28μm波长范围内的傅里叶变换红外光谱表明PtSe₂适用于远红外波长范围的PD。我们通过直接生长集成的PtSe₂ PD优于通过标准二维层转移制造的PtSe₂ PD。红外响应度、化学稳定性、低温下的选择性和共形生长以及高载流子迁移率的潜力,使得PtSe₂成为光电子学和PIC中有吸引力的二维材料。