Natrella Michele, Rouvalis Efthymios, Liu Chin-Pang, Liu Huiyun, Renaud Cyril C, Seeds Alwyn J
Department of Electronic & Electrical Engineering, University College London, Torrington Place, London, UK.
Opt Express. 2012 Aug 13;20(17):19279-88. doi: 10.1364/OE.20.019279.
We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test devices have been fabricated and characterised; the devices exhibited 0.1 A/W responsivity at 1550 nm, 12.5 GHz -3 dB bandwidth and -5.8 dBm output power at 10 GHz for a photocurrent of 4.8 mA. The use of Solid Source Molecular Beam Epitaxy enables the major issue associated with the unintentional diffusion of zinc in Metal Organic Vapour Phase Epitaxy to be overcome and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of Gas Source Molecular Beam Epitaxy.
我们报道了首个通过固态源分子束外延生长的基于铟镓砷磷的单载流子光电二极管结构；该材料包含厚度达300 nm的铟镓砷磷层以及一个120 nm厚的铟镓砷吸收层。已制作并表征了大面积垂直照明测试器件；这些器件在1550 nm处表现出0.1 A/W的响应度、12.5 GHz的-3 dB带宽以及在10 GHz时对于4.8 mA光电流的-5.8 dBm输出功率。固态源分子束外延的使用使得与金属有机气相外延中锌的无意扩散相关的主要问题得以克服，并且带来了分子束外延生长技术所提供的卓越控制的优势，而无需气源分子束外延处理有毒气体的成本和风险。
