Chen Lung-Chien, Tien Ching-Ho, Mu Chien-Sheng
Department of Electro-optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan.
Opt Express. 2010 Feb 1;18(3):2302-8. doi: 10.1364/OE.18.002302.
This study discusses the effect of spin-polarized injection and photo-ionization on MnZnO films formed on the surface of GaN-based light-emitting diodes (LEDs). In a magnetic field, the optical output power of GaN-based LEDs increased by about 60% and 50% at injection currents of 20 and 100 mA, respectively. Spin-polarized injection from a MnZnO film and photo-ionization in GaN-based LED can efficiently improve the optical output power of a GaN-based LED. At forward bias of 3.4 V, the forward current of GaN-based LED with MnZnO film in a magnetic field of 0.5 T includes an injection current of 33.71 mA, spin-polarized current of 0.97 mA, and photo-ionized current of 0.4 mA.
本研究探讨了自旋极化注入和光电离对在氮化镓基发光二极管（LED）表面形成的锰氧化锌薄膜的影响。在磁场中，氮化镓基LED在20 mA和100 mA注入电流下的光输出功率分别提高了约60%和50%。来自锰氧化锌薄膜的自旋极化注入以及氮化镓基LED中的光电离能够有效提高氮化镓基LED的光输出功率。在3.4 V正向偏压下，在0.5 T磁场中带有锰氧化锌薄膜的氮化镓基LED的正向电流包括33.71 mA的注入电流、0.97 mA的自旋极化电流和0.4 mA的光电离电流。
