Cho Chu-Young, Kwon Min-Ki, Park Il-Kyu, Hong Sang-Hyun, Kim Jae-Joon, Park Seong-Eun, Kim Sung-Tae, Park Seong-Ju
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, South Korea.
Opt Express. 2011 Jul 4;19 Suppl 4:A943-8. doi: 10.1364/OE.19.00A943.
We report high-efficiency blue light-emitting diodes (LEDs) with air voids embedded in GaN. The air void structures were created by the lateral epitaxial overgrowth (LEO) of GaN using a tungsten mask. The optical output power was increased by 60% at an injection current of 20 mA compared with that of conventional LEDs without air voids. The enhancement is attributed to improved internal quantum efficiency because the air voids reduce the threading dislocation and strain in the LEO GaN epilayer. A ray-tracing simulation revealed that the path length of light escaping from the LED with air voids is much shorter because the air voids efficiently change the light path toward the top direction to improve the light extraction of the LED.
我们报道了在氮化镓中嵌入气孔的高效蓝光发光二极管（LED）。气孔结构是通过使用钨掩膜对氮化镓进行横向外延生长（LEO）形成的。与没有气孔的传统LED相比，在20 mA的注入电流下，光输出功率提高了60%。这种增强归因于内部量子效率的提高，因为气孔减少了LEO氮化镓外延层中的穿透位错和应变。光线追踪模拟表明，带有气孔的LED中光逸出的路径长度要短得多，因为气孔有效地将光路改变为朝着顶部方向，从而提高了LED的光提取效率。
