Zhou Weidong, Li Kexue, Shen Qinmei, Chen Qiaoling, Long Jingming
The institute of information optics, Zhejiang Normal University, Jinhua, 321004, China.
Opt Express. 2010 Feb 1;18(3):2573-8. doi: 10.1364/OE.18.002573.
In this paper, a high voltage and fast pulse discharge circuit is developed and combined with laser ablation to enhance optical emission from Si crystal. The new characters of the discharge circuit and its effect on the plasma emission are presented. Characterizing by a damping and periodical oscillating discharge voltage and current with a short period of approximately 0.5 micros, the discharge automatically occurs approximately 1 micros after laser ablation. Significant optical emission enhancement, up to 52 times improved signal intensity relative to the signal in the absence of the discharge spark, is observed. Better line stability in terms of relative standard deviation and improved signal to noise (S/N) ratio are also achieved. The enhanced line intensity with better stability and S/N ratio, similar with the observation when using double-pulse laser induced breakdown spectroscopy (DP-LIBS), probably will benefit element analysis in the future.
本文开发了一种高压快速脉冲放电电路，并将其与激光烧蚀相结合，以增强硅晶体的光发射。介绍了放电电路的新特性及其对等离子体发射的影响。该放电的特征是具有约0.5微秒的短周期的阻尼和周期性振荡放电电压及电流，在激光烧蚀后约1微秒自动发生。观察到显著的光发射增强，相对于没有放电火花时的信号，信号强度提高了52倍。在相对标准偏差方面也实现了更好的谱线稳定性，并提高了信噪比。增强的谱线强度、更好的稳定性和信噪比，类似于使用双脉冲激光诱导击穿光谱法（DP-LIBS）时的观察结果，可能会在未来有利于元素分析。
