Giannini Vincenzo, Berrier Audrey, Maier Stefan A, Sánchez-Gil José Antonio, Rivas Jaime Gómez
FOM Institute for Atomic and Molecular Physics AMOLF, Philips Research Laboratories, High Tech Campus 4, 5656 AE, Eindhoven, The Netherlands.
Opt Express. 2010 Feb 1;18(3):2797-807. doi: 10.1364/OE.18.002797.
Terahertz plasmonic resonances in semiconductor (indium antimonide, InSb) dimer antennas are investigated theoretically. The antennas are formed by two rods separated by a small gap. We demonstrate that, with an appropriate choice of the shape and dimension of the semiconductor antennas, it is possible to obtain large electromagnetic field enhancement inside the gap. Unlike metallic antennas, the enhancement around the semiconductor plasmonics antenna can be easily adjusted by varying the concentration of free carriers, which can be achieved by optical or thermal excitation of carriers or electrical carrier injection. Such active plasmonic antennas are interesting structures for THz applications such as modulators and sensors.
对半导体（锑化铟，InSb）二聚体天线中的太赫兹等离子体共振进行了理论研究。天线由两根由小间隙隔开的棒组成。我们证明，通过适当选择半导体天线的形状和尺寸，可以在间隙内获得较大的电磁场增强。与金属天线不同，通过改变自由载流子的浓度可以轻松调节半导体等离子体天线周围的增强，这可以通过载流子的光激发或热激发或电载流子注入来实现。这种有源等离子体天线对于诸如调制器和传感器等太赫兹应用来说是有趣的结构。
