Tyssen E, Nimtz G
Appl Opt. 1977 Nov 1;16(11):2957-60. doi: 10.1364/AO.16.002957.
Far infrared emission is observed when electric fields are applied to n-type Hg(1-x)Cd(x) Te compounds. The intensity varies linearly with the electric field. The spectral analysis of the radiation carried out by Fourier spectroscopy reveals one emission line at 121 cm(-1) and a broadband above 150 cm(-1). The application of strong magnetic fields does not influence the spectral distribution. We explain the emission due to transitions between levels of lattice defects and the valence band. These levels observed with n-type samples are in agreement with acceptor states deduced from experiments with p-type material.
当对n型Hg(1 - x)Cd(x)Te化合物施加电场时，会观察到远红外发射。其强度随电场呈线性变化。通过傅里叶光谱对辐射进行的光谱分析显示，在121 cm⁻¹处有一条发射线，在150 cm⁻¹以上有一个宽带。强磁场的施加不影响光谱分布。我们解释这种发射是由于晶格缺陷能级与价带之间的跃迁。在n型样品中观察到的这些能级与从p型材料实验推导的受主态一致。
