Halpert H, Musicant B L
Appl Opt. 1972 Oct 1;11(10):2157-61. doi: 10.1364/AO.11.002157.
N-color (Hg,Cd)Te photodetectors capable of spectral band analysis have been fabricated, tested, and delivered. This paper discusses the state of the art in (Hg,Cd)Te n-color photoconductive detectors. Included is a discussion of narrow band two-color devices responsive in the region of 8-14 micro. D*lambda (lambda(p), 10 kHz, 1) higher than 3.5 x 10(9) cm Hz((1/2))/W have been achieved in both top and bottom elements at 95 K. The top element exhibited a cutoff wavelength of 8.8 micro, while the bottom element was responsive from 9.6 micro to 11.1 micro. The device was assembled with a long-wavelength pass filter that yielded two narrow bands. Preliminary results are also included for a unique three-color (Hg,Cd) Te device with cutoff wavelengths of 9.1 micro, 10.8 micro, and 13.8 micro.
能够进行光谱带分析的N色（汞镉碲）光电探测器已制造、测试并交付。本文讨论了（汞镉碲）N色光电导探测器的技术现状。其中包括对在8 - 14微米区域响应的窄带双色器件的讨论。在95K时，顶部和底部元件的D*λ（λp，10kHz，1）均高于3.5×10⁹cm Hz½/W。顶部元件的截止波长为8.8微米，而底部元件在9.6微米至11.1微米范围内有响应。该器件装配有一个产生两个窄带的长波通滤波器。还给出了一种截止波长为9.1微米、10.8微米和13.8微米的独特三色（汞镉碲）器件的初步结果。
