CEA, LETI, MINATEC, F38054 Grenoble, France.
Langmuir. 2010 Jun 1;26(11):8981-7. doi: 10.1021/la904771s.
Alkoxysilane having various functional headgroups (amino and mercapto) and morphologies was deposited by supercritical CO(2) onto a porous dielectric material to replace the metallic barrier used in semiconductor devices. These organic layers were successfully coated with Cu. The morphologies of the stacks were investigated by X-ray and neutron reflectometry and atomic force microscopy. Whereas PVD Cu deposition is not adapted to silanized dielectric material with mercapto and aminopropyltrimethoxysilane but acceptable with aminoethylaminopropyltrimethoxysilane, the MOCVD process is more interesting. XRR and NR data clearly indicate that silane layers remain intact after copper deposition and, depending on the Cu immobilization capability of the chemical function of the silane and its orientation into the layer, the Cu film morphologies are different. Dense, thin films having small Cu grains were obtained with an aminoethylaminopropyltrimethoxysilane layer, and thick films having a low density and large Cu grains were obtained with an aminopropyltrimethoxysilane layer. Nucleation and growth mechanisms are discussed.
具有各种官能团（氨基和巯基）和形态的烷氧基硅烷通过超临界 CO(2)沉积到多孔介电材料上，以取代半导体器件中使用的金属阻挡层。这些有机层成功地涂覆了铜。通过 X 射线和中子反射计以及原子力显微镜研究了堆叠的形态。虽然 PVD Cu 沉积不适用于带有巯基和氨丙基三甲氧基硅烷的硅烷化介电材料，但适用于氨乙基氨丙基三甲氧基硅烷，而 MOCVD 工艺更有趣。XRR 和 NR 数据清楚地表明，在铜沉积后硅烷层保持完整，并且根据硅烷的化学官能团的铜固定能力及其在层中的取向，Cu 膜形态不同。具有小 Cu 晶粒的致密、薄膜用氨乙基氨丙基三甲氧基硅烷层获得，而具有低密度和大 Cu 晶粒的厚膜用氨丙基三甲氧基硅烷层获得。讨论了成核和生长机制。
