Laboratory of Materials Science, Shanghai Institute of Organic Chemistry, Chinese Academy of Sciences, 345 Lingling Road, Shanghai 200032, China.
J Am Chem Soc. 2010 Mar 24;132(11):3697-9. doi: 10.1021/ja910667y.
A new class of n-type semiconductors for organic thin film transistors (OTFTs), based on core-expanded naphthalene diimides fused with 2-(1,3-dithiol-2-ylidene)malonitrile groups, is reported. The first two representatives of these species, derived from long branched N-alkyl chains, have been successfully used as active layers for high-performance, ambient-stable, solution-processed n-channel OTFTs. Their bottom-gate top-contact devices fabricated by spin-coating methods exhibit high electron mobilities of up to 0.51 cm(2) V(-1) s(-1) with current on/off ratios of 10(5)-10(7), and small threshold voltages below 10 V under ambient conditions. As this class of n-type organic semiconductors has relatively low-lying LUMO levels and good film-formation ability, they also displayed good environmental stability even with prolonged exposure to ambient air. Both the device performance and the ambient stability are among the best for n-channel OTFTs reported to date.
报道了一类新型的 n 型半导体有机薄膜晶体管（OTFT），基于核心扩展萘二酰亚胺与 2-（1,3-二硫代-2-亚基）丙二腈基团的融合。这两种物质的前两个代表，由长支链 N-烷基链衍生而来，已成功用作高性能、环境稳定、溶液处理 n 通道 OTFT 的有源层。通过旋涂法制备的底栅顶接触器件表现出高达 0.51 cm(2) V(-1) s(-1)的电子迁移率和 10(5)-10(7)的电流开关比，在环境条件下阈值电压低于 10 V。由于这类 n 型有机半导体具有较低的 LUMO 能级和良好的成膜能力，即使长时间暴露在环境空气中，它们也表现出良好的环境稳定性。迄今为止，n 通道 OTFT 的器件性能和环境稳定性均处于最佳之列。
