Seleznev D, Kropachev G, Kozlov A, Kuibeda R, Koshelev V, Kulevoy T, Hershcovitch A, Jonson B, Poole J, Alexeyenko O, Gurkova E, Oks E, Gushenets V, Polozov S, Masunov E
Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
Rev Sci Instrum. 2010 Feb;81(2):02B901. doi: 10.1063/1.3258422.
A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Institute for Theoretical and Experimental Physics (ITEP) the Bernas ion source successfully generated the beam of decaborane ions. The carborane (C(2)B(10)H(12)) ion beam is more attractive material due to its better thermal stability. The results of carborane ion beam generation are presented. The result of the beam implantation into the silicon wafer is presented as well.
过去5年里，一直致力于为数百电子伏特离子注入机联合研发稳态强硼离子源。通过注入硼原子团簇，低能硼束的引出和传输难题有望得到解决。在理论与实验物理研究所（ITEP），贝尔纳离子源成功产生了癸硼烷离子束。碳硼烷（C(2)B(10)H(12)）离子束因其更好的热稳定性而更具吸引力。本文给出了碳硼烷离子束产生的结果，同时也展示了该离子束注入硅片的结果。
