Kulevoy T, Gerasimenko N, Seleznev D, Kropachev G, Kozlov A, Kuibeda R, Yakushin P, Petrenko S, Medetov N, Zaporozhan O
Institute for Theoretical and Experimental Physics, Moscow 117218, Russia.
Rev Sci Instrum. 2010 Feb;81(2):02B905. doi: 10.1063/1.3264636.
The rhenium silicides are very attractive materials for semiconductor industry. In the Institute for Theoretical and Experimental Physics (ITEP) at the ion source test bench the research program of rhenium silicide production by ion beam implantation are going on. The investigation of silicon wafer after implantation of rhenium ion beam with different energy and with different total dose were carried out by secondary ions mass spectrometry, energy-dispersive x-ray microanalysis, and x-ray diffraction analysis. The first promising results of rhenium silicide film production by high intensity ion beam implantation are presented.
硅化铼是半导体工业中极具吸引力的材料。在理论与实验物理研究所（ITEP）的离子源试验台上，通过离子束注入生产硅化铼的研究项目正在进行。利用二次离子质谱、能量色散X射线微分析和X射线衍射分析，对不同能量和不同总剂量的铼离子束注入后的硅片进行了研究。本文展示了通过高强度离子束注入生产硅化铼薄膜的首批有前景的成果。
