Kulevoy T V, Gerasimenko N N, Seleznev D N, Fedorov P A, Temirov A A, Alyoshin M E, Kraevsky S V, Smirnov D I, Yakushin P E, Khoroshilov V V
Institute for Theoretical and Experimental Physics, Moscow, Russia.
Rev Sci Instrum. 2012 Feb;83(2):02B913. doi: 10.1063/1.3673632.
At the ion source test bench in Institute for Theoretical and Experimental Physics the program of ion source development for semiconductor industry is in progress. In framework of the program the Metal Vapor Vacuum Arc ion source for germanium and rhenium ion beam generation was developed and investigated. It was shown that at special conditions of ion beam implantation it is possible to fabricate not only homogenous layers of rhenium silicides solid solutions but also clusters of this compound with properties of quantum dots. At the present moment the compound is very interesting for semiconductor industry, especially for nanoelectronics and nanophotonics, but there is no very developed technology for production of nanostructures (for example quantum sized structures) with required parameters. The results of materials synthesis and exploration are presented.
在理论与实验物理研究所的离子源测试台上，半导体行业离子源开发项目正在进行。在该项目框架内，开发并研究了用于产生锗和铼离子束的金属蒸汽真空弧离子源。结果表明，在离子束注入的特殊条件下，不仅可以制造出均匀的铼硅化物固溶体层，还可以制造出具有量子点特性的该化合物团簇。目前，这种化合物对半导体行业，特别是对纳米电子学和纳米光子学非常有吸引力，但尚无非常成熟的技术来生产具有所需参数的纳米结构（例如量子尺寸结构）。本文展示了材料合成与探索的结果。
