Maloney Patrick G, Smith Peter, King Vernon, Billman Curtis, Winkler Mark, Mazur Eric
U.S. Army Communications-Electronics Research, Development, and Engineering Center, Research, Development and Engineering Command, Night Vision and Electronic Sensors Directorate, Science and Technology Division, 10221 Burbeck Road Fort Belvoir, Virginia 22060, USA.
Appl Opt. 2010 Mar 1;49(7):1065-8. doi: 10.1364/AO.49.001065.
Infrared transmittance and hemispherical-directional reflectance data from 2.5 to 25 microm on microstructured silicon surfaces have been measured, and spectral emissivity has been calculated for this wavelength range. Hemispherical-total emissivity is calculated for the samples and found to be 0.84 before a measurement-induced annealing and 0.65 after the measurement for the sulfur-doped sample. Secondary samples lack a measurement-induced anneal, and reasons for this discrepancy are presented. Emissivity numbers are plotted and compared with a silicon substrate, and Aeroglaze Z306 black paint. Use of microstructured silicon as a blackbody or microbolometer surface is modeled and presented, respectively.
已测量了微结构硅表面在2.5至25微米范围内的红外透射率和半球方向反射率数据，并计算了该波长范围内的光谱发射率。计算了样品的半球全发射率，发现硫掺杂样品在测量诱导退火前为0.84，测量后为0.65。二次样品没有测量诱导退火，并给出了这种差异的原因。绘制了发射率数值，并与硅衬底和Aeroglaze Z306黑色涂料进行了比较。分别对将微结构硅用作黑体或微测辐射热计表面进行了建模和展示。
