Lv Jian, Zhang Ting, Zhang Peng, Zhao Yingchun, Li Shibin
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, 610054, People's Republic of China.
Beijing Haidian District Vocational School, 100084, Beijing, People's Republic of China.
Nanoscale Res Lett. 2018 Apr 19;13(1):110. doi: 10.1186/s11671-018-2523-4.
As a widely used semiconductor material, silicon has been extensively used in many areas, such as photodiode, photodetector, and photovoltaic devices. However, the high surface reflectance and large bandgap of traditional bulk silicon restrict the full use of the spectrum. To solve this problem, many methods have been developed. Among them, the surface nanostructured silicon, namely black silicon, is the most efficient and widely used. Due to its high absorption in the wide range from UV-visible to infrared, black silicon is very attractive for using as sensitive layer of photodiodes, photodetector, solar cells, field emission, luminescence, and other photoelectric devices. Intensive study has been performed to understand the enhanced absorption of black silicon as well as the response extended to infrared spectrum range. In this paper, the application of black silicon is systematically reviewed. The limitations and challenges of black silicon material are also discussed. This article will provide a meaningful introduction to black silicon and its unique properties.
作为一种广泛使用的半导体材料，硅已被广泛应用于许多领域，如光电二极管、光电探测器和光伏器件。然而，传统体硅的高表面反射率和大带隙限制了光谱的充分利用。为了解决这个问题，人们开发了许多方法。其中，表面纳米结构化硅，即黑硅，是最有效且应用最广泛的。由于其在从紫外可见到红外的宽范围内具有高吸收率，黑硅作为光电二极管、光电探测器、太阳能电池、场发射、发光及其他光电器件的敏感层非常具有吸引力。人们已经进行了深入研究以了解黑硅增强的吸收以及扩展到红外光谱范围的响应。本文对黑硅的应用进行了系统综述。还讨论了黑硅材料的局限性和挑战。本文将对黑硅及其独特性能进行有意义的介绍。
