Département de Physique and Groupe d'Etude des Protéines Membranaires, Université de Montréal, Montréal, Quebec H3C 3J7 Canada.
J Biol Chem. 2010 Apr 30;285(18):14005-19. doi: 10.1074/jbc.M109.097717. Epub 2010 Mar 4.
Voltage-gated ion channels are controlled by the membrane potential, which is sensed by peripheral, positively charged voltage sensors. The movement of the charged residues in the voltage sensor may be detected as gating currents. In Shaker K(+) channels, the gating currents are asymmetric; although the on-gating currents are fast, the off-gating currents contain a slow component. This slow component is caused by a stabilization of the activated state of the voltage sensor and has been suggested to be linked to ion permeation or C-type inactivation. The molecular determinants responsible for the stabilization, however, remain unknown. Here, we identified an interaction between Arg-394, Glu-395, and Leu-398 on the C termini of the S4-S5 linker and Tyr-485 on the S6 of the neighboring subunit, which is responsible for the development of the slow off-gating component. Mutation of residues involved in this intersubunit interaction modulated the strength of the associated interaction. Impairment of the interaction still led to pore opening but did not exhibit slow gating kinetics. Development of this interaction occurs under physiological ion conduction and is correlated with pore opening. We, thus, suggest that the above residues stabilize the channel in the open state.
电压门控离子通道受膜电位控制,而膜电位由带正电荷的外周电压传感器感知。在电压传感器中带电荷残基的移动可被检测为门控电流。在 Shaker K(+)通道中,门控电流是非对称的;尽管导通电流很快,但关闭门控电流包含一个缓慢的成分。这个缓慢的成分是由电压传感器的激活状态稳定引起的,并且与离子渗透或 C 型失活有关。然而,负责稳定的分子决定因素仍然未知。在这里,我们确定了 S4-S5 连接环的 C 末端上的 Arg-394、Glu-395 和 Leu-398 与相邻亚基的 S6 上的 Tyr-485 之间的相互作用,这是导致缓慢关闭门控成分发展的原因。涉及这种亚基间相互作用的残基突变调节了相关相互作用的强度。相互作用的损害仍然导致孔的打开,但没有表现出缓慢的门控动力学。这种相互作用的发展发生在生理离子传导下,并与孔的打开相关。因此,我们提出上述残基稳定通道处于开放状态。