Department of Pharmacology, University of Washington, Seattle, USA.
Channels (Austin). 2010 Mar-Apr;4(2):75-7. doi: 10.4161/chan.4.2.10998. Epub 2010 Mar 14.
The mechanism by which the voltage sensors of voltage-gated ion channels move gating charge during the activation process is a subject of active debate. In this issue of Channels, Gamal El-Din et al. probe the movements of the S4 voltage sensor of Shaker K(+) channels through clever use of omega gating pore currents generated by paired gating-charge mutations. Their results provide strong support for a sliding helix or helical screw mechanism of gating charge movement.
电压门控离子通道的电压传感器在激活过程中移动门控电荷的机制是一个活跃的争论话题。在本期的《通道》杂志中，Gamal El-Din 等人通过巧妙利用由成对的门控电荷突变产生的 ω 门控孔电流，探测 Shaker K(+) 通道的 S4 电压传感器的运动。他们的研究结果为门控电荷移动的滑动螺旋或螺旋螺杆机制提供了有力支持。
