Institut für Halbleiteroptik und Funktionelle Grenzflächen, Universität Stuttgart, Stuttgart, Germany.
Nanotechnology. 2010 Mar 26;21(12):125606. doi: 10.1088/0957-4484/21/12/125606. Epub 2010 Mar 5.
Low density (approximately 10(7) cm(-2)), small sized InGaAs quantum dots were grown on a GaAs substrate by metal-organic vapor-phase epitaxy and a special annealing technique. The structural quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 microeV and fine structure splittings of 25 microeV. High signal to noise ratios (approximately 140) and a nearly background free autocorrelation measurement indicate an excellent optical quality and single photon emission behavior. Furthermore, time resolved measurements reveal excitonic decay times typically in the range between 800 and 2300 ps and biexcitonic decay times around 300 ps.
通过金属有机气相外延和特殊退火技术，在 GaAs 衬底上生长了低密度（约为 10(7) cm(-2)）、小尺寸的 InGaAs 量子点。原子力显微镜测量研究了结构量子点特性和退火技术的影响。高分辨率微光致发光光谱显示出窄的光致发光线，线宽低至 11 μeV，精细结构分裂为 25 μeV。高信噪比（约为 140）和几乎无背景的自相关测量表明了优异的光学质量和单光子发射行为。此外，时间分辨测量表明激子衰减时间通常在 800 到 2300 ps 之间，双激子衰减时间约为 300 ps。
